“Fabrication of Metals Oxide and Nitride Nanofilms and Research of their Physical Characteristics”

Author: Amiran Bibilashvili
Co-authors: L.Jibuti, Z.Kushitashvili, B.Duadze
Keywords: Oxide, nitride, magnetron, memristor, detector
Annotation:

In our work is considered fabrication of double-layered ZrO2-HfO2 and GaN nanofilms, using modernized reactive magnetron sputtering technology. We studied the influence of the pulse photon treatment (PPT) and annealing in the N2 ambient on the physical characteristics of fabricated structures. For studying electro-physical and optical characteristics of fabricated nanofilms, C-V, electron microscopy, X-ray, XPS, I-V and optical spectrum measurements were conducted. Measurement results showed potential application of Substrate-ZrO2-HfO2 nanostructure in memristors and ionistors and GaN nanofilms in ultraviolet and infrared detectors.